2010-04-06 bf776 1 1 2 3 4 high performance npn bipolar rf transistor ? high performance low noise amplifier ? low minimum noise figure of typ. 0.8 db @ 1.8 ghz ? for a wide range of non automotive applications such as wlan, wimax, uwb, bluetooth, gps, sdars, dab, lnb, umts/lte and ism bands ? easy to use standard package with visible leads ? pb-free (rohs compliant) package esd ( e lectro s tatic d ischarge) sensitive device, observe handling precaution! type marking pin configuration package bf776 r3s 1=b 2=e 3=c 4=e - - sot343 maximum ratings at t a = 25 c, unless otherwise specified parameter symbol value unit collector-emitter voltage t a = 25 c t a = -55 c v ceo 4.0 3.5 v collector-emitter voltage v ces 13 collector-base voltage v cbo 13 emitter-base voltage v ebo 1.2 collector current i c 50 ma base current i b 3 total power dissipation 1) t s 90c p tot 200 mw junction temperature t j 150 c ambient temperature t a -55 ... 150 storage temperature t s t g -55 ... 150 thermal resistance parameter symbol value unit junction - soldering point 2) r thjs 300 k/w 1 t s is measured on the emitter lead at the soldering point to the pcb 2 for calculation of r thja please refer to application note thermal resistance
2010-04-06 bf776 2 electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. dc characteristics collector-emitter breakdown voltage i c = 1 ma, i b = 0 v (br)ceo 4 4.7 - v collector-emitter cutoff current v ce = 5 v, v be = 0 i ces - 1 - na collector-base cutoff current v cb = 5 v, i e = 0 i cbo - 1 - emitter-base cutoff current v eb = 0.5 v, i c = 0 i ebo - 10 - dc current gain i c = 30 ma, v ce = 3 v, pulse measured h fe - 180 - -
2010-04-06 bf776 3 electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. ac characteristics (verified by random sampling) transition frequency i c = 30 ma, v ce = 3 v, f = 1 ghz f t - 46 - ghz collector-base capacitance v cb = 3 v, f = 1 mhz, v be = 0 , emitter grounded c cb - 0.09 - pf collector emitter capacitance v ce = 3 v, f = 1 mhz, v be = 0 , base grounded c ce - 0.25 - emitter-base capacitance v eb = 0.5 v, f = 1 mhz, v cb = 0 , collector grounded c eb - 0.5 - noise figure i c = 5 ma, v ce = 3 v, f = 1.8 ghz, z s = z sopt i c = 5 ma, v ce = 3 v, f = 6 ghz, z s = z sopt f - - 0.8 1.3 - - db power gain, maximum stable 1) i c = 30 ma, v ce = 3 v, z s = z sopt , z l = z lopt , f = 1.8 ghz g ms - 24 - db power gain, maximum available 1) i c = 30 ma, v ce = 3 v, z s = z sopt , z l = z lopt , f = 6 ghz g ma - 12.5 - db transducer gain i c = 30 ma, v ce = 3 v, z s = z l = 50 ? , f = 1.8 ghz f = 6 ghz | s 21e | 2 - - 21.5 11 - - db third order intercept point at output 2) v ce = 3 v, i c = 30 ma, z s = z l =50 ? , f = 1 . 8 ghz ip 3 - 28 - dbm 1db compression point at output i c = 30 ma, v ce = 3 v, z s = z l =50 ? , f = 1 . 8 ghz p -1db - 13 - 1 g ma = | s 21e / s 12e | (k-(k2-1) 1/2 ), g ms = | s 21e / s 12e | 2 ip3 value depends on termination of all intermodulation frequency components. termination used for this measurement is 50 ? from 0.1 mhz to 6 ghz
2010-04-06 bf776 4 spice parameter for the spice model as well as for s-parameters (including noise parameters) please refer to our internet website www.infineon.com/rf.models . please consult our website and download the latest versions before actually starting your design. the simulation data have been generated and verified using typical devices. the bf776 spice model reflects the typical dc- and rf-performance with high accuracy.
2010-04-06 bf776 5 package sot343 package outline foot print marking layout (example) standard packing reel ?180 mm = 3.000 pieces/reel reel ?330 mm = 10.000 pieces/reel 2005, june date code (ym) bga420 type code 0.2 4 2.15 8 2.3 1.1 pin 1 0.6 0.8 1.6 1.15 0.9 1.25 0.1 0.1 max. 2.1 0.1 0.15 +0.1 -0.05 0.3 +0.1 2 0.2 0.1 0.9 12 3 4 a +0.1 0.6 a m 0.2 1.3 -0.05 -0.05 0.15 0.1 m 4x 0.1 0.1 min. pin 1 manufacturer
2010-04-06 bf776 6 edition 2009-11-16 published by infineon technologies ag 81726 munich, germany ? 2009 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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